Phosphorus-containing silazane composition, phosphorus-containing siliceous film, phosphorus-containing siliceous filler, method for producing phosphorus-containing siliceous film, and semiconductor device
US7368491B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2004 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Aug 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An objective of the present invention is to provide a phosphorous-containing siliceous material having a specific permittivity of not more than 3.5. The phosphorus-containing silazane composition according to the present invention is characterized by comprising a polyalkylsilazane and at least one phosphorus compound in an organic solvent. A phosphorus-containing siliceous film may be formed by coating the composition onto a substrate to form a film which is then prebaked at a temperature of 50 to 300° C. and is then baked in an inert atmosphere at a temperature of 300 to 700° C. The phosphorus compound according to the present invention is preferably a pentavalent phosphoric ester or phosphazene compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.