Method of detecting misalignment of ion implantation area
US7368749B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 19, 2006 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Oct 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of detecting misalignment of ion implantation areas comprises forming at least one standard pattern consisting of a first area and a second area for use in measuring resistance, implanting first and second conduction type impurity ions into the first and second areas, respectively, and measuring a resistance of the standard pattern. The method also includes forming a misalignment inspection pattern consisting of a first area and a second area on a predetermined area within a semiconductor substrate, implanting first and second conduction type impurity ions into the misalignment inspection pattern and active regions on the semiconductor substrate, respectively, and measuring a resistance of the misalignment inspection pattern. The method concludes by comparing the resistance of the standard pattern with the resistance of the misalignment inspection pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.