Trench cut light emitting diodes and methods of fabricating same
US7368756B2 · kind B2 · utility
47Cited by
15References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2005 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | May 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01
Abstract
A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.