MOS transistor device structure combining Si-trench and field plate structures for high voltage device
US7368785B2 · kind B2 · utility
26Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2006 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Aug 31, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A metal-oxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed. The HV MOS transistor device comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elongate the path for disturbing the lateral electric field, therefore the transistor device has a relatively small size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.