Mirror structure with single crystal silicon cross-member
US7369297B2 · kind B2 · utility
2Cited by
55References
33Claims
0Family size
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Key dates
| Filing date | Dec 8, 2005 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Dec 8, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B26/0841
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Hydrogen cleave silicon process for light modulating mirror structure using single crystal silicon as the base cross-member. Existing processes use two critical alignment steps that can contribute to higher actuation voltages and result in lower manufacturing yields. The hydrogen cleave process simplifies the manufacturing process to one step: transferring a thin film of single crystal silicon to the CMOS substrate, resulting in minimal alignment error and providing large bonding area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.