Amorphous carbon contact film for contact hole etch process
US7371634B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2005 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Jul 2, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P80/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a contact etch stop layer and contact hole formation method for reduced underlying material loss and improved device performance, the method including providing a semiconductor substrate including an active region including a CMOS device, STI structures, and metal silicide regions; forming a fluorine doped amorphous carbon layer over the active region; forming a PMD layer on the fluorine doped amorphous carbon layer; dry etching contact holes in the PMD layer to expose the fluorine doped amorphous carbon layer; and, removing the fluorine doped amorphous carbon layer according to a dry stripping process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.