Cheng-Ku Chen
10Patents
5h-index
15Co-inventors
59Inventor score
Filing activity: Jan 13, 1998 → Jul 1, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8421166B2 | Semiconductor device and fabrication thereof | Emerging Cross-Sectional Technologies | 25 | Active |
| US7071515B2 | Narrow width effect improvement with photoresist plug process and STI corner ion implantation | Electricity | 16 | Expired |
| US6500727B1 | Silicon shallow trench etching with round top corner by photoresist-free process | Emerging Cross-Sectional Technologies | 10 | Expired |
| US5962193A | Method and apparatus for controlling air flow in a liquid coater | Emerging Cross-Sectional Technologies | 7 | Expired |
| US7129140B2 | Method of forming polysilicon gate structures with specific edge profiles for optimization of LDD offset spacing | Electricity | 6 | Expired |
| US7291553B2 | Method for forming dual damascene with improved etch profiles | Electricity | 5 | Expired |
| US7371634B2 | Amorphous carbon contact film for contact hole etch process | Emerging Cross-Sectional Technologies | 5 | Active |
| US6787455B2 | Bi-layer photoresist method for forming high resolution semiconductor features | Electricity | 5 | Expired |
| US7633110B2 | Memory cell | Electricity | 4 | Expired |
| US7399679B2 | Narrow width effect improvement with photoresist plug process and STI corner ion implantation | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.