Substrate laser marking
US7371659B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2001 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Apr 3, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldTextile and paper machines
- WIPO sectorMechanical engineering
Abstract
A method for forming a feature in a substrate, where residue within the feature can be easily removed. An upper sidewall portion of the feature is formed, where the upper sidewall portion forms a void in the substrate. The upper sidewall portion has an upper sidewall angle. A lower sidewall portion of the feature is formed, where the lower sidewall portion forms a void in the substrate. The lower sidewall portion has a lower sidewall angle. The upper sidewall angle of the upper sidewall portion is shallower than the lower sidewall angle of the lower sidewall portion. By forming the feature with a shallower sidewall angle at the top of the feature, any debris within the feature is more susceptible to rinsing, etching, or other cleaning procedures, and thus the feature is more easily cleaned than standard features having relatively steeper sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.