Method of forming a gate of a semiconductor device
US7371669B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2005 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Jul 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/662
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for forming a gate in a semiconductor device, a first preliminary gate structure is formed on a substrate. The first preliminary gate structure includes a gate oxide layer, a polysilicon layer pattern and a tungsten layer pattern sequentially stacked on the substrate. A primary oxidation process is performed using oxygen radicals at a first temperature for adjusting a thickness of the gate oxide layer to form a second preliminary gate structure having tungsten oxide. The tungsten oxide is reduced to a tungsten material using a gas containing hydrogen to form a gate structure. The tungsten oxide may not be formed on the gate structure so that generation of the whiskers may be suppressed. Thus, a short between adjacent wirings may not be generated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.