Inventor · Seoul, KR

Sun-Pil Youn

35Patents
8h-index
39Co-inventors
71Inventor score

Filing activity: Oct 30, 2002 → Sep 19, 2014

Most-cited inventions

PatentTitleAreaCited byStatus
US7704788B2 Methods of fabricating multi-bit phase-change memory devices and devices formed thereby Physics 64 Active
US8604615B2 Semiconductor device including a stack of semiconductor chips, underfill material and molding material Electricity 53 Active
US8901749B2 Semiconductor packages and electronic systems including the same Electricity 27 Active
US7084061B2 Methods of fabricating a semiconductor device having MOS transistor with strained channel Electricity 18 Expired
US9343432B2 Semiconductor chip stack having improved encapsulation Electricity 18 Active
US7629677B2 Semiconductor package with inner leads exposed from an encapsulant Electricity 14 Active
US7696552B2 Semiconductor devices including high-k dielectric materials Electricity 10 Active
US7109104B2 Methods of fabricating a semiconductor device having a metal gate pattern Electricity 8 Expired
US8796861B2 Semiconductor package having support member Electricity 6 Active
US6797559B2 Method of fabricating semiconductor device having metal conducting layer Electricity 5 Expired
US7521316B2 Methods of forming gate structures for semiconductor devices Electricity 5 Expired
US8643175B2 Multi-channel package and electronic system including the same Electricity 5 Active
US7232756B2 Nickel salicide process with reduced dopant deactivation Electricity 5 Expired
US7371669B2 Method of forming a gate of a semiconductor device Electricity 4 Active
US8809888B2 Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device Electricity 3 Active
US7544597B2 Method of forming a semiconductor device including an ohmic layer Electricity 3 Active
US8178424B2 Method of fabricating light-emitting apparatus with improved light extraction efficiency and light-emitting apparatus fabricated using the method Electricity 3 Active
US8034701B2 Methods of forming recessed gate electrodes having covered layer interfaces Electricity 3 Active
US7544996B2 Methods of fabricating a semiconductor device having a metal gate pattern Electricity 2 Active
US7582931B2 Recessed gate electrodes having covered layer interfaces and methods of forming the same Electricity 2 Active
US7777272B2 Non-volatile memory device and semiconductor package including the same Electricity 2 Active
US8319238B2 Light emitting device with improved light extraction efficiency Electricity 2 Active
US7772637B2 Semiconductor devices including gate structures and leakage barrier oxides Electricity 2 Active
US7306996B2 Methods of fabricating a semiconductor device having a metal gate pattern Electricity 2 Active
US8415181B2 Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.