Semiconductor device and manufacturing method thereof
US7372108B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 27, 2006 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Jun 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/017
Abstract
The present invention discloses a semiconductor device and a manufacturing method thereof which improves its characteristics even though it is miniaturized. According to one aspect of the present invention, it is provided a semiconductor device comprising a first semiconductor element device including a pair of first diffusion layers formed in the semiconductor substrate with a first gate electrode therebetween, and a first conductor layer formed in the first diffusion layer and having an internal stress in a first direction, and a second semiconductor element device including a pair of second diffusion layers formed in the semiconductor substrate with a second gate electrode therebetween, and a second conductor layer formed in the second diffusion layer, having an internal stress in a second direction opposite to the first direction, and constituted of the same element as that of the first conductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.