Segmented column virtual ground scheme in a static random access memory (SRAM) circuit
US7372721B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Oct 25, 2006 |
| Grant date | May 13, 2008 |
| Priority date | — |
| Expiry date | Nov 10, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/412
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A static random access memory (SRAM) cell array is provided that reduces leakage current. The SRAM cell array is configured in a plurality of columns. Each of the columns comprises: a column virtual ground node; a column switch for selectively coupling the column virtual ground node to one of a ground or a nominal low voltage; and a plurality of segments. Each of the segments comprises: a segment virtual ground node; a plurality of SRAM cells including a virtual ground signal coupled to the segment virtual ground node; and a virtual ground switch for selectively coupling the segment virtual ground node to one of either a nominal low voltage or the column virtual ground node. A method for operating the SRAM cell array is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.