Plasma processing apparatus using active matching
US7373899B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2004 |
| Grant date | May 20, 2008 |
| Priority date | — |
| Expiry date | Jun 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32183
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma processing apparatus having a processing chamber connected to a vacuum exhauster so that its inside pressure can be reduced by the vacuum exhauster, a gas feed unit for supplying gas into the processing chamber, a substrate electrode provided in the processing chamber and on which a sample can be placed, an RF power supply connected through a matching circuit to the substrate electrode, plasma generating means for generating plasma within the processing chamber and a voltage waveform control circuit provided within the matching circuit or between the substrate electrode and the matching circuit to flatten the voltage waveform from the RF power supply.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.