SONOS memory device having side gate stacks and method of manufacturing the same
US7374991B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2005 |
| Grant date | May 20, 2008 |
| Priority date | — |
| Expiry date | Nov 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
In a silicon-oxide-nitride-oxide-silicon (SONOS) memory device and a method of manufacturing the same, a SONOS memory device includes a semiconductor substrate, an insulating layer deposited on the semiconductor substrate, an active layer formed on a predetermined region of the insulating layer and divided into a source region, a drain region, and a channel region, a first side gate stack formed at a first side of the channel region, and a second side gate stack formed at a second side of the channel region opposite the first side of the channel region. In the SONOS memory device, at least two bits of data may be stored in each SONOS memory device, thereby allowing the integration density of the semiconductor memory device to be increased without increasing an area thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.