Methods of forming capacitors
US7374993B2 · kind B2 · utility
2Cited by
7References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2003 |
| Grant date | May 20, 2008 |
| Priority date | — |
| Expiry date | Dec 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a capacitor includes forming a first capacitor electrode over a semiconductor substrate. A capacitor dielectric region is formed onto the first capacitor electrode. The capacitor dielectric region has an exposed oxide containing surface. The exposed oxide containing surface of the capacitor dielectric region is treated with at least one of a borane or a silane. A second capacitor electrode is deposited over the treated oxide containing surface. The second capacitor electrode has an inner metal surface contacting against the treated oxide containing surface. Other aspects and implementations are contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.