High dense sintered body of aluminum nitride, method for preparing the same and member for manufacturing semiconductor using the sintered body
US7375045B2 · kind B2 · utility
2Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2006 |
| Grant date | May 20, 2008 |
| Priority date | — |
| Expiry date | Sep 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention provide a high dense aluminum nitride sintered body, a preparing method thereof, and a member for manufacturing semiconductor using the sintered body which has excellent leakage current characteristic, enough adsorbing property, good detachment property and excellent thermal conductivity and so can be applied to even a member for manufacturing semiconductor requiring high volume resistivity like the coulomb type electrostatic chucks as well as the Johnsen-Rahbek type electrostatic chucks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.