Monitoring ionizing radiation in silicon-on insulator integrated circuits
US7375339B2 · kind B2 · utility
5Cited by
8References
5Claims
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Key dates
| Filing date | Apr 28, 2006 |
| Grant date | May 20, 2008 |
| Priority date | — |
| Expiry date | Jul 27, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T1/244
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A method, device and system for monitoring ionizing radiation. The method including: collecting an ionizing radiation induced charge collected by the depletion region of a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and coupling a cathode of the diode to a precharged node of a clocked logic circuit such that the ionizing radiation induced charge collected by a depletion region of the diode will discharge the precharged node and change an output state of the clocked logic circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.