Resist material and pattern formation method
US7378216B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2005 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | Jan 18, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0397
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resist material has a base polymer containing a compound including a copolymer of a first unit represented by a general formula of the following Chemical Formula 1 and a second unit represented by a general formula of the following Chemical Formula 2:wherein R1, R2, R3, R7, and R8 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; and R9 is a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.