Plasma implantation of deuterium for passivation of semiconductor-device interfaces
US7378335B2 · kind B2 · utility
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2References
19Claims
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Key dates
| Filing date | Nov 29, 2005 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | Feb 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28238
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor-based device includes providing a substrate including a semiconductor layer, forming a gate dielectric layer on the semiconductor layer, forming a plasma including deuterium, plasma implanting deuterium from the plasma into the substrate, and annealing the substrate to promote passivation of the interface between the dielectric layer and the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.