Method of manufacturing nitride semiconductor device
US7378351B2 · kind B2 · utility
0Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2005 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | Aug 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride semiconductor device is manufactured by the step of forming a nitride semiconductor layer form on a GaN substrate main surface, the step of polishing a back surface of the GaN substrate formed with the above-mentioned nitride semiconductor layer, the step of dry etching the back surface of the GaN substrate subjected to the above-mentioned polishing by using a gas mixture of chlorine and oxygen, and the step of forming an n-type electrode on the back surface of the GaN substrate subjected to the above-mentioned dry etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.