Memory element using active layer of blended materials
US7378682B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2005 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | May 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K19/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present memory device has first and second electrodes, a passive layer between the first and second electrodes and on and in contact with the first electrode, and an active layer between the first and second electrodes and on and in contact with the passive layer and second electrode, for receiving a charged specie from the passive layer. The active layer is a mixture of (i) a first polymer, and (ii) a second polymer for enhancing ion transport, improving the interface and promoting a rapid and substantially uniform distribution of the charged specie in the active layer, i.e., preventing a localized injection of the charged species. These features result in a memory element with improved stability, a more controllable ON-state resistance, improved switching speed and a lower programming voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.