Magnetic tunnel junction and memory device including the same
US7378698B2 · kind B2 · utility
48Cited by
13References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2004 |
| Grant date | May 27, 2008 |
| Priority date | — |
| Expiry date | Mar 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.