Patent · US Expired

Overlay measurement target

US7379184B2 · kind B2 · utility

18Cited by
15References
27Claims
0Family size

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Key dates

Filing dateJan 13, 2005
Grant dateMay 27, 2008
Priority date
Expiry dateJul 24, 2025

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

In an overlay metrology method used during semiconductor device fabrication, an overlay alignment mark facilitates alignment and/or measurement of alignment error of two layers on a semiconductor wafer structure, or different exposures on the same layer. A target is small enough to be positioned within the active area of a semiconductor device combined with appropriate measurement methods, which result in improved measurement accuracy.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.