Patent · US Active

Device and procedure for measuring memory cell currents

US7379339B2 · kind B2 · utility

4Cited by

6References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Edvin Paparisto · Munich, DE
Stephan Rogl · Vilsheim, DE

Key dates

Filing date	Nov 16, 2005
Grant date	May 27, 2008
Priority date	—
Expiry date	May 31, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C2029/5006
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The invention relates to a procedure and a device for measuring memory cell currents, in particular for non-volatile memory components, where the device has a current mirroring device for mirroring a current flowing through a memory cell when it is being read, and delivering an analog current signal generated during the mirroring, or an analog current signal derived from it, to an analog output pad of a memory component.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.