Dual-chamber plasma processing apparatus
US7381291B2 · kind B2 · utility
18Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2004 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Apr 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3244
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dual-chamber plasma processing apparatus comprises two reaction spaces which are equipped with different gas inlet lines and different RF systems. Each reaction space is provided with an RF wave entry path and an RF wave return path to supply RF power from an RF power source and return RF power to the same RF power source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.