Apparatus and method to improve the resolution of photolithography systems by improving the temperature stability of the reticle
US7381502B2 · kind B2 · utility
2Cited by
2References
8Claims
0Family size
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Key dates
| Filing date | Sep 16, 2004 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Sep 1, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask for use in a photolithographic process. The mask includes a plate or substrate having first and second opposite surfaces, a first image on the first surface of the substrate and a second image on the second surface of the substrate. When the mask is used in a photolithographic process, energy is reflected by the first image prior to entering the substrate and energy is reflected by the second image after passing through the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.