Method of making a semiconductor device with improved heat dissipation
US7381592B2 · kind B2 · utility
5Cited by
12References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 18, 2007 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Jan 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/16195
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a heat dissipation member comprising the steps of forming a resist on a substrate, removing a portion or portions of said resist formed on the substrate in places where posts are to be formed, forming the posts on the substrate in said places where the resist is removed, forming a joint material on the posts disposed on the substrate and removing the remaining resist on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.