Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode
US7381608B2 · kind B2 · utility
61Cited by
28References
20Claims
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Key dates
| Filing date | Dec 7, 2004 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Dec 7, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconductor device is described. That method comprises adding nitrogen to a silicon dioxide layer to form a nitrided silicon dioxide layer on a substrate. After forming a sacrificial layer on the nitrided silicon dioxide layer, the sacrificial layer is removed to generate a trench. A high-k gate dielectric layer is formed on the nitrided silicon dioxide layer within the trench, and a metal gate electrode is formed on the high-k gate dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.