Voltage charge pump and method of operating the same
US7382177B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2004 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | May 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/077
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A voltage pump comprising a charging transistor responsive to a first control signal, the charging transistor operable to connect a node to a first voltage, a pumping capacitor responsive to a second control signal, the pumping capacitor operable to pump additional charge the node, and a pumping transistor responsive to a third control signal, the pumping transistor operable to connect the node to an output, wherein the charging transistor, the pumping capacitor, and the pumping transistor are thin-gate transistors. A method comprising charging a node to a first voltage, boosting the node to a second voltage, and connecting the node to an output, wherein the absolute value of the gate-to-source, gate-to-drain, and drain-to-source voltages of the plurality of thin-gate transistors does not exceed the absolute value of a supply voltage. Because of the rules governing abstracts, this abstract should not be used to construe the claims.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.