Thin film transistor with a passivation layer
US7382421B2 · kind B2 · utility
156Cited by
15References
26Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 12, 2004 |
| Grant date | Jun 3, 2008 |
| Priority date | — |
| Expiry date | Jun 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
Apparatus comprising a thin film transistor having passivation layer disposed adjacent to a second surface of said channel layer, wherein said passivation layer comprises one or more wide-bandgap dielectric materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.