Method of forming a rare-earth dielectric layer
US7384481B2 · kind B2 · utility
22Cited by
25References
38Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 19, 2005 |
| Grant date | Jun 10, 2008 |
| Priority date | — |
| Expiry date | Mar 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/173
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide the basis for forming high-performance devices and circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.