Top coating composition for photoresist and method of forming photoresist pattern using same
US7384730B2 · kind B2 · utility
8Cited by
3References
53Claims
0Family size
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Key dates
| Filing date | Nov 17, 2005 |
| Grant date | Jun 10, 2008 |
| Priority date | — |
| Expiry date | Jan 5, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/162
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Top coating compositions capable of being used in immersion lithography, and methods of forming photoresist patterns using the same, are provided. The top coating composition includes: a polymer, a base; and a solvent, wherein the polymer may be represented by Formula I:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.