ESD protection device for high voltage
US7384802B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2006 |
| Grant date | Jun 10, 2008 |
| Priority date | — |
| Expiry date | Sep 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
An electrostatic discharge (ESD) protection structure and a method for forming the same are provided. The structure includes a substrate having a buried layer, and a first and a second high-voltage well region on the buried layer. The first and second high-voltage well regions have opposite conductivity types and physically contact each other. The structure further includes a field region extending from the first high-voltage well region into the second high-voltage well region, a first doped region in the first high-voltage well region and physically contacting the field region, and a second doped region in the second high-voltage well region and physically contacting the field region. The first and second doped regions and the first high-voltage well region form a bipolar transistor that can protect an integrated circuit from ESD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.