Fabrication method of high-brightness light emitting diode having reflective layer
US7384808B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2005 |
| Grant date | Jun 10, 2008 |
| Priority date | — |
| Expiry date | Aug 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
A method for fabricating a high brightness LED structure is disclosed herein, which comprises at least the following steps. First, a first layered structure is provided by sequentially forming a light generating structure, a non-alloy ohmic contact layer, and a first metallic layer from bottom to top on a side of a first substrate. Then, a second layered structure comprising at least a second substrate is provided. Then, the two-layered structures are wafer-bonded together, with the top side of the second layered structure interfacing with the top side of said first layered structure. The first metallic layer functions as a reflective mirror, which is made of a pure metal or a metal nitride to achieve superior reflectivity, and whose reflective surface does not participate in the wafer-bonding process directly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.