Semiconductor film, semiconductor device and method of their production
US7384828B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2004 |
| Grant date | Jun 10, 2008 |
| Priority date | — |
| Expiry date | Apr 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6715
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.