Hybrid orientation SOI substrates, and method for forming the same
US7385257B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2006 |
| Grant date | Jun 10, 2008 |
| Priority date | — |
| Expiry date | Oct 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D87/00
Abstract
The present invention relates to a hybrid orientation semiconductor-on-insulator (SOI) substrate structure that contains a base semiconductor substrate with one or more first device regions and one or more second device regions located over the base semiconductor substrate. The one or more first device regions include an insulator layer with a first semiconductor device layer located atop. The one or more second device regions include a counter-doped semiconductor layer with a second semiconductor device layer located atop. The first and the second semiconductor device layers have different crystallographic orientations. Preferably, the first (or the second) device regions are n-FET device regions, and the first semiconductor device layer has a crystallographic orientation that enhances electron mobility, while the second (or the first) device regions are p-FET device regions, and the second semiconductor device layer has a different surface crystallographic orientation that enhances hole mobility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.