High-voltage metal-oxide-semiconductor devices and method of making the same
US7385274B2 · kind B2 · utility
5Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2006 |
| Grant date | Jun 10, 2008 |
| Priority date | — |
| Expiry date | Aug 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
An improved high-voltage process is disclosed. In order to improve the performance in terms of breakdown voltage and to maintain the integrity of the STI structures, the thick gate oxide layer of the high-voltage device area is not etched back before a high-dosage ion doping process. One photo mask is therefore omitted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.