Capacitance probe for thin dielectric film characterization
US7385405B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 19, 2006 |
| Grant date | Jun 10, 2008 |
| Priority date | — |
| Expiry date | Jan 19, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R27/2658
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A capacitance probe for thin dielectric film characterization provides a highly sensitive capacitance measurement method and reduces the contact area needed to obtain such a measurement. Preferably, the capacitance probe is connected to a measurement system by a transmission line and comprises a center conductive tip and RLC components between the center conductor and the ground of the transmission line. When the probe tip is in contact with a sample, an MIS or MIM structure is formed, with the RLC components and the capacitance of the MIS or MIM structure forming a resonant circuit. By sending a driving signal to the probe and measuring the reflected signal from the probe through the transmission line, the resonant characteristic of the resonant circuit can be obtained. The capacitance of the MIS or MIM structure is obtainable from the resonant characteristics and the dielectric film thickness or other dielectric properties are also extractable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.