Method for improving low-K dielectrics by supercritical fluid treatments
US7387973B2 · kind B2 · utility
4Cited by
4References
30Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 30, 2004 |
| Grant date | Jun 17, 2008 |
| Priority date | — |
| Expiry date | Sep 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for treating an inter-metal dielectric (IMD) layer to improve a mechanical strength and/or repair plasma etching damage including providing a low-K silicon oxide containing dielectric insulating layer; and carrying out a super critical fluid treatment of the low-K dielectric insulating layer including supercritical CO2 and a solvent including a silicon bond forming substituent having a bonding energy greater than a Si—H to replace at least a portion of the Si—H bonds with the silicon bond forming substituent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.