Flip chip metallization method and devices

US7388288B2 · kind B2 · utility

Assignees

• University of Utah Research Foundation · US
• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Florian Solzbacher · Salt Lake City, US
• Reid Harrison · Salt Lake City, US
• Richard A. Normann · Park City, US
• Hans-Hermann Oppermann · Berlin, DE
• Lothar Dietrich · Berlin, DE
• Matthias Klein · Poughkeepsie, US
• Michael Töpper · Berlin, DE

Key dates

• Filing date: Dec 1, 2006
• Grant date: Jun 17, 2008
• Expiry date: Dec 1, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/19042
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Interconnect metallization schemes and devices for flip chip bonding are disclosed and described. Metallization schemes include an adhesion layer, a diffusion barrier layer, a wetable layer, and a wetting stop layer. Various thicknesses and materials for use in the different layers are disclosed and are particularly useful for metallization in implantable electronic devices such as neural electrode arrays.