Apparatus for chemical vapor deposition
US7390366B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 28, 2002 |
| Grant date | Jun 24, 2008 |
| Priority date | — |
| Expiry date | Oct 14, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4558
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for CVD is disclosed. Processing gas is injected to an upper center portion of a wafer supporting member by a gas focus ring installed at an inner side surface of a reaction chamber. The processing gas is prevented from coming down to a lower space of the reaction chamber by purge gas supplied from a lower surface of the reaction chamber. Accordingly to this, a particle source is minimized and a period to check an equipment is prolonged. Also, the purge gas is prevented from mounting to an upper space of the reaction chamber by a pressure of the processing gas, thereby not influencing to a process for CVD. The processing gas and the purge gas are exhausted through a gas outlet installed at a lateral wall of the reaction chamber as a ring shaped recess. A shielding layer for preventing the processing gas and the purge gas from being mixed each other is horizontally installed at a middle portion of the gas outlet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.