Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric

US7390703B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hagen Klauk · Erlangen, DE
• Marcus Halik · Erlangen, DE
• Ute Zschieschang · Stuttgart, DE
• Guenter Schmid · Hemhofen, DE
• Stefan Braun · Blankenloch, DE

Key dates

• Filing date: Feb 22, 2005
• Grant date: Jun 24, 2008
• Expiry date: Jan 15, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02244
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric includes through-plating by patterning a gate electrode material, and bringing an organic compound having dielectric properties into contact with the contact hole material and the gate electrode material. A contact hole material and the gate electrode material are at least partially uncovered. The contact hole is material not identical to the gate electrode material. A self-assembled monolayer of the organic compound is formed above the gate electrode material. The method also includes depositing and patterning the source and drain contacts without removing the self-assembled monolayer of the organic compound, and depositing a semiconductor material.