Semiconductor devices and methods of making same
US7391058B2 · kind B2 · utility
3Cited by
3References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2005 |
| Grant date | Jun 24, 2008 |
| Priority date | — |
| Expiry date | Jun 27, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02529
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite structure having a silicon carbide epitaxial layer is provided. The epitaxial layer includes at least four regions arranged vertically and defining respective interfaces, where each of the regions is characterized by a respective impurity concentration, where the impurity concentrations vary across each of the interfaces, and where each of the impurity concentrations exceeds 1×1017 cm−3 for at least one single impurity in all of the regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.