Semiconductor device
US7391068B2 · kind B2 · utility
24Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2006 |
| Grant date | Jun 24, 2008 |
| Priority date | — |
| Expiry date | May 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6212
Abstract
A semiconductor device comprising at least one FET formed on the semiconductor substrate, wherein the FET comprises a source region, a drain region, a channel region formed between the source and drain regions and including a plurality of projected epitaxial silicon regions arranged in a width direction of the channel region, each of the projected epitaxial silicon regions having a triangular ridge portion, a gate insulating film formed on the channel region, and a gate electrode formed on the gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.