Manufacturing method of monocrystalline gallium nitride localized substrate
US7393763B2 · kind B2 · utility
0Cited by
5References
2Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 14, 2005 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Dec 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate.An area in which monocrystalline gallium nitride 410 is grown is locally present on a silicon substrate 100 by forming silicon carbide 200 on the silicon substrate 100 to locally form the monocrystalline gallium nitride 410 on the above-mentioned silicon carbide 200. Silicon nitride 220 is used as a mask in forming the above-mentioned monocrystalline gallium nitride 410.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.