Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode
US7394680B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2007 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Jun 12, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate to have a stack structure of a variable resistance element and an access element, the variable resistance element storing a high resistance state or a low resistance state in a non-volatile manner, the access element having such an off-state resistance value in a certain voltage range that is ten times or more as high as that in a select state; and a read/write circuit formed on the semiconductor substrate, wherein the variable resistance element includes: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of the electrodes serving as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.