Spin-injection magnetic random access memory
US7394684B2 · kind B2 · utility
23Cited by
7References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2006 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Jan 26, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A spin-injection magnetic random access memory of an aspect of the present invention includes a magnetoresistive element, a unit which writes data into the magnetoresistive element by use of spin-polarized electrons generated by a spin-injection current and which applies, to the magnetoresistive element, a magnetic field of a direction of a hard magnetization of the magnetoresistive element during the writing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.