Patent · US Active

Fuse memory cell with improved protection against unauthorized access

US7394713B2 · kind B2 · utility

3Cited by

20References

22Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Matthias Knopf · Poing, DE
Stephan Kraus · Oedheim, DE
Gunther Lehmann · Poughkeepsie, US

Key dates

Filing date	Apr 27, 2006
Grant date	Jul 1, 2008
Priority date	—
Expiry date	Jul 1, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C17/165
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory device is provided, the memory device having a memory cell, a programming unit for programming the memory cell, and a switching unit for optionally connecting or isolating a terminal of the memory cell to or from a potential which serves for altering an electrical property of the memory cell and for thereby effecting an altered programming state of the memory cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.