Semiconductor integrated circuit for high frequency power amplifier and electric components with the semiconductor integrated circuit
US7395036B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2005 |
| Grant date | Jul 1, 2008 |
| Priority date | — |
| Expiry date | Jan 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03G3/3042
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a high frequency power amplifier circuit in which bias voltages are applied to the transistors for amplification by current mirroring, The power amplifier includes a detection circuit including a transistor for detection which receives the AC component of an input signal to the last-stage transistor for amplification at its control terminal, a current mirror circuit which mirrors current flowing through that transistor, and a current-voltage converter which converts current flowing in the slave side of the current mirror circuit into a voltage. In the detection circuit, a voltage from a bias circuit for generating the bias voltages for the transistors for amplification is applied to the control terminal of the transistor for detections, and output of the detection circuit is applied to the control terminal of the last-stage transistor for amplification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.