Patent · US Expired

Apparatus for manufacturing single crystal

US7396411B2 · kind B2 · utility

3Cited by
11References
14Claims
0Family size

Assignees

Inventors

Key dates

Filing dateMar 21, 2006
Grant dateJul 8, 2008
Priority date
Expiry dateMar 21, 2026

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T117/1096
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method for manufacturing a single crystal includes the steps of: flowing a raw material gas toward a seed crystal in a reactive chamber so that the single crystal grows from the seed crystal; controlling the raw material gas by a gas flow control member having a cylindrical shape; passing the raw material gas through a clearance between the seed crystal and an inner wall of the gas flow control member; and flowing a part of the raw material gas to bypass the seed crystal. The method provides the single crystal having good quality.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.